1999. 11. 30 1/2 semiconductor technical data KTC8550 epitaxial planar pnp transistor revision no : 3 high current application. feature complementary to ktc8050. maximum rating (ta=25 1 ) to-92 dim millimeters a b c d f g h j k l 4.70 max 4.80 max 3.70 max 0.45 1.00 1.27 0.85 0.45 14.00 0.50 0.55 max 2.30 d 1 2 3 b a j k g h f f l e c e c m n 0.45 max m 1.00 n 1. emitter 3. collector 2. base + _ electrical characteristics (ta=25 1 ) characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-15v, i e =0 - - -50 na collector-base breakdown voltage v (br)cbo i c =-0.5ma, i e =0 -35 - - v collector-emitter breakdown voltage v (br)ceo i c =-1ma, i b =0 -30 - - v dc current gain h fe (1) (note) v ce =-1v, i c =-50ma 100 - 300 h fe (2) v ce =-1v, i c =-350ma 60 - - collector-emitter saturation voltage v ce(sat) i c =-500ma, i b =-50ma - - -0.5 v base-emitter voltage v be v ce =-1v, i c =-500ma - - -1.2 v transition frequency f t v ce =-5v, i c =-10ma - 120 - mhz collector output capacitance c ob v cb =-10v, f=1mhz, i e =0 - 19 - pf note : h fe (1) classification c : 100 200, d : 150 300 characteristic symbol rating unit collector-base voltage v cbo -35 v collector-emitter voltage v ceo -30 v emitter-base voltage v ebo -5 v collector current i c -800 ma emitter current i e 800 ma collector power dissipation p c 625 mw junction temperature t j 150 1 storage temperature range t stg -55 150 1
1999. 11. 30 2/2 KTC8550 revision no : 3 collector current i (ma) c 0 0 collector-emitter voltage v (v) ce ce c i - v 10 dc current gain h fe 2k -30 -10 -3 -1 collector current i (ma) c h - i -1 -2 -3 -4 -5 -6 -200 -400 -600 -800 -1k common emitter ta=25 c i =-1ma b -8 -7 -6 -5 -4 -3 -2 0 fe c collector current i (ma) collector-emitter saturation -1 -3 -100 -30 c -0.01 ce(sat) v - i ce(sat) c base-emitter voltage v (v) collector current i (ma) -1 -0.2 be c i - v c be -100 -300 -1 k 30 50 100 300 500 1k common emitter v =-1v ce ta=100 c ta=25 c ta=-25 c v (v) -300 -1k -10 -0.03 -0.05 -0.1 -0.3 -0.5 -1 -3 common emitter i /i =25 c b ta=100 c ta=25 c ta=-25 c -0.4 -0.6 -0.8 -1.0 -3 -5 -10 -30 -50 -100 -300 -500 -1k common emitter v =-1v ce t a = 1 00 c ta=25 c t a=-25 c collector power dissipation p (mw) 0 c 0 ambient temperature ta ( c) pc - ta 100 200 300 400 500 600 700 25 50 75 100 125 150 175
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